Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency
Identifieur interne : 000002 ( Main/Repository ); précédent : 000001; suivant : 000003Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency
Auteurs : RBID : Pascal:14-0055767Descripteurs français
- Pascal (Inist)
- Pastille électronique, Cellule solaire concentrateur, Evaluation performance, Cellule solaire multijonction, Composé III-V, Taux conversion, Désadaptation, Méthode directe, Fixation pastille, Cellule solaire tandem, Composé ternaire, Phosphure de gallium, Phosphure d'indium, Composé binaire, GaInP, InP.
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Abstract
Triple-junction solar cells from III-V compound semiconductors have thus far delivered the highest solar-electric conversion efficiencies. Increasing the number of junctions generally offers the potential to reach even higher efficiencies, but material quality and the choice of bandgap energies turn out to be even more importance than the number of junctions. Several four-junction solar cell architectures with optimum bandgap combination are found for lattice-mismatched III-V semiconductors as high bandgap materials predominantly possess smaller lattice constant than low bandgap materials. Direct wafer bonding offers a new opportunity to combine such mismatched materials through a permanent, electrically conductive and optically transparent interface. In this work, a GaAs-based top tandem solar cell structure was bonded to an InP-based bottom tandem cell with a difference in lattice constant of 3.7%. The result is a GaInP/GaAs//GaInAsP/GaInAs four-junction solar cell with a new record efficiency of 44.7% at 297-times concentration of the AM1.5d (ASTM G173-03) spectrum. This work demonstrates a successful pathway for reaching highest conversion efficiencies with III-V multi-junction solar cells having four and in the future even more junctions.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency</title><author><name sortKey="Dimroth, Frank" uniqKey="Dimroth F">Frank Dimroth</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2</s1><s2>79110 Freiburg</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Fribourg-en-Brisgau</region><settlement type="city">Fribourg-en-Brisgau</settlement></placeName></affiliation></author><author><name sortKey="Grave, Matthias" uniqKey="Grave M">Matthias Grave</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2</s1><s2>79110 Freiburg</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Fribourg-en-Brisgau</region><settlement type="city">Fribourg-en-Brisgau</settlement></placeName></affiliation></author><author><name sortKey="Beutel, Paul" uniqKey="Beutel P">Paul Beutel</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2</s1><s2>79110 Freiburg</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Fribourg-en-Brisgau</region><settlement type="city">Fribourg-en-Brisgau</settlement></placeName></affiliation></author><author><name sortKey="Fiedeler, Ulrich" uniqKey="Fiedeler U">Ulrich Fiedeler</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2</s1><s2>79110 Freiburg</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Fribourg-en-Brisgau</region><settlement type="city">Fribourg-en-Brisgau</settlement></placeName></affiliation></author><author><name sortKey="Karcher, Christian" uniqKey="Karcher C">Christian Karcher</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2</s1><s2>79110 Freiburg</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Fribourg-en-Brisgau</region><settlement type="city">Fribourg-en-Brisgau</settlement></placeName></affiliation></author><author><name sortKey="Tibbits, Thomas N D" uniqKey="Tibbits T">Thomas N. D. Tibbits</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2</s1><s2>79110 Freiburg</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Fribourg-en-Brisgau</region><settlement type="city">Fribourg-en-Brisgau</settlement></placeName></affiliation></author><author><name sortKey="Oliva, Eduard" uniqKey="Oliva E">Eduard Oliva</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2</s1><s2>79110 Freiburg</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Fribourg-en-Brisgau</region><settlement type="city">Fribourg-en-Brisgau</settlement></placeName></affiliation></author><author><name sortKey="Siefer, Gerald" uniqKey="Siefer G">Gerald Siefer</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2</s1><s2>79110 Freiburg</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Fribourg-en-Brisgau</region><settlement type="city">Fribourg-en-Brisgau</settlement></placeName></affiliation></author><author><name sortKey="Schachtner, Michael" uniqKey="Schachtner M">Michael Schachtner</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2</s1><s2>79110 Freiburg</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Fribourg-en-Brisgau</region><settlement type="city">Fribourg-en-Brisgau</settlement></placeName></affiliation></author><author><name sortKey="Wekkeli, Alexander" uniqKey="Wekkeli A">Alexander Wekkeli</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2</s1><s2>79110 Freiburg</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Fribourg-en-Brisgau</region><settlement type="city">Fribourg-en-Brisgau</settlement></placeName></affiliation></author><author><name sortKey="Bett, Andreas W" uniqKey="Bett A">Andreas W. Bett</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2</s1><s2>79110 Freiburg</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Fribourg-en-Brisgau</region><settlement type="city">Fribourg-en-Brisgau</settlement></placeName></affiliation></author><author><name sortKey="Krause, Rainer" uniqKey="Krause R">Rainer Krause</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>SOITEC S.A., Parc Technologique des Fontaines</s1><s2>38190 Bernin</s2><s3>FRA</s3><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ><sZ>15 aut.</sZ><sZ>16 aut.</sZ><sZ>17 aut.</sZ></inist:fA14><country>France</country><wicri:noRegion>38190 Bernin</wicri:noRegion><wicri:noRegion>Parc Technologique des Fontaines</wicri:noRegion><wicri:noRegion>38190 Bernin</wicri:noRegion></affiliation></author><author><name sortKey="Piccin, Matteo" uniqKey="Piccin M">Matteo Piccin</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>SOITEC S.A., Parc Technologique des Fontaines</s1><s2>38190 Bernin</s2><s3>FRA</s3><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ><sZ>15 aut.</sZ><sZ>16 aut.</sZ><sZ>17 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Bernin</settlement></placeName></affiliation></author><author><name sortKey="Blanc, Nicolas" uniqKey="Blanc N">Nicolas Blanc</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>SOITEC S.A., Parc Technologique des Fontaines</s1><s2>38190 Bernin</s2><s3>FRA</s3><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ><sZ>15 aut.</sZ><sZ>16 aut.</sZ><sZ>17 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Bernin</settlement></placeName></affiliation></author><author><name sortKey="Drazek, Charlotte" uniqKey="Drazek C">Charlotte Drazek</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>SOITEC S.A., Parc Technologique des Fontaines</s1><s2>38190 Bernin</s2><s3>FRA</s3><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ><sZ>15 aut.</sZ><sZ>16 aut.</sZ><sZ>17 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Bernin</settlement></placeName></affiliation></author><author><name sortKey="Guiot, Eric" uniqKey="Guiot E">Eric Guiot</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>SOITEC S.A., Parc Technologique des Fontaines</s1><s2>38190 Bernin</s2><s3>FRA</s3><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ><sZ>15 aut.</sZ><sZ>16 aut.</sZ><sZ>17 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Bernin</settlement></placeName></affiliation></author><author><name sortKey="Ghyselen, Bruno" uniqKey="Ghyselen B">Bruno Ghyselen</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>SOITEC S.A., Parc Technologique des Fontaines</s1><s2>38190 Bernin</s2><s3>FRA</s3><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ><sZ>15 aut.</sZ><sZ>16 aut.</sZ><sZ>17 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Bernin</settlement></placeName></affiliation></author><author><name sortKey="Salvetat, Thierry" uniqKey="Salvetat T">Thierry Salvetat</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>CEA LETI MINATEC campus, 17 rue des Martyrs</s1><s2>38054 Grenoble</s2><s3>FRA</s3><sZ>18 aut.</sZ><sZ>19 aut.</sZ><sZ>20 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author><author><name sortKey="Tauzin, Aurelie" uniqKey="Tauzin A">Aurélie Tauzin</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>CEA LETI MINATEC campus, 17 rue des Martyrs</s1><s2>38054 Grenoble</s2><s3>FRA</s3><sZ>18 aut.</sZ><sZ>19 aut.</sZ><sZ>20 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author><author><name sortKey="Signamarcheix, Thomas" uniqKey="Signamarcheix T">Thomas Signamarcheix</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>CEA LETI MINATEC campus, 17 rue des Martyrs</s1><s2>38054 Grenoble</s2><s3>FRA</s3><sZ>18 aut.</sZ><sZ>19 aut.</sZ><sZ>20 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author><author><name sortKey="Dobrich, Anja" uniqKey="Dobrich A">Anja Dobrich</name><affiliation wicri:level="3"><inist:fA14 i1="04"><s1>Helmholtz-Zentrum Berlin HZB, Hahn-Meitner-Platz 1</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>21 aut.</sZ><sZ>22 aut.</sZ><sZ>23 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Hannappel, Thomas" uniqKey="Hannappel T">Thomas Hannappel</name><affiliation wicri:level="3"><inist:fA14 i1="04"><s1>Helmholtz-Zentrum Berlin HZB, Hahn-Meitner-Platz 1</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>21 aut.</sZ><sZ>22 aut.</sZ><sZ>23 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Schwarzburg, Klaus" uniqKey="Schwarzburg K">Klaus Schwarzburg</name><affiliation wicri:level="3"><inist:fA14 i1="04"><s1>Helmholtz-Zentrum Berlin HZB, Hahn-Meitner-Platz 1</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>21 aut.</sZ><sZ>22 aut.</sZ><sZ>23 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0055767</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0055767 INIST</idno><idno type="RBID">Pascal:14-0055767</idno><idno type="wicri:Area/Main/Corpus">000140</idno><idno type="wicri:Area/Main/Repository">000002</idno></publicationStmt><seriesStmt><idno type="ISSN">1062-7995</idno><title level="j" type="abbreviated">Prog. photovolt. : (Print)</title><title level="j" type="main">Progress in photovoltaics : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compound</term><term>Concentrator solar cells</term><term>Conversion rate</term><term>Direct method</term><term>Gallium phosphide</term><term>III-V compound</term><term>Indium phosphide</term><term>Mismatching</term><term>Multijunction solar cells</term><term>Performance evaluation</term><term>Tandem solar cell</term><term>Ternary compound</term><term>Wafer</term><term>Wafer bonding</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Pastille électronique</term><term>Cellule solaire concentrateur</term><term>Evaluation performance</term><term>Cellule solaire multijonction</term><term>Composé III-V</term><term>Taux conversion</term><term>Désadaptation</term><term>Méthode directe</term><term>Fixation pastille</term><term>Cellule solaire tandem</term><term>Composé ternaire</term><term>Phosphure de gallium</term><term>Phosphure d'indium</term><term>Composé binaire</term><term>GaInP</term><term>InP</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Triple-junction solar cells from III-V compound semiconductors have thus far delivered the highest solar-electric conversion efficiencies. Increasing the number of junctions generally offers the potential to reach even higher efficiencies, but material quality and the choice of bandgap energies turn out to be even more importance than the number of junctions. Several four-junction solar cell architectures with optimum bandgap combination are found for lattice-mismatched III-V semiconductors as high bandgap materials predominantly possess smaller lattice constant than low bandgap materials. Direct wafer bonding offers a new opportunity to combine such mismatched materials through a permanent, electrically conductive and optically transparent interface. In this work, a GaAs-based top tandem solar cell structure was bonded to an InP-based bottom tandem cell with a difference in lattice constant of 3.7%. The result is a GaInP/GaAs//GaInAsP/GaInAs four-junction solar cell with a new record efficiency of 44.7% at 297-times concentration of the AM1.5d (ASTM G173-03) spectrum. This work demonstrates a successful pathway for reaching highest conversion efficiencies with III-V multi-junction solar cells having four and in the future even more junctions.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1062-7995</s0></fA01><fA03 i2="1"><s0>Prog. photovolt. : (Print)</s0></fA03><fA05><s2>22</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency</s1></fA08><fA11 i1="01" i2="1"><s1>DIMROTH (Frank)</s1></fA11><fA11 i1="02" i2="1"><s1>GRAVE (Matthias)</s1></fA11><fA11 i1="03" i2="1"><s1>BEUTEL (Paul)</s1></fA11><fA11 i1="04" i2="1"><s1>FIEDELER (Ulrich)</s1></fA11><fA11 i1="05" i2="1"><s1>KARCHER (Christian)</s1></fA11><fA11 i1="06" i2="1"><s1>TIBBITS (Thomas N. D.)</s1></fA11><fA11 i1="07" i2="1"><s1>OLIVA (Eduard)</s1></fA11><fA11 i1="08" i2="1"><s1>SIEFER (Gerald)</s1></fA11><fA11 i1="09" i2="1"><s1>SCHACHTNER (Michael)</s1></fA11><fA11 i1="10" i2="1"><s1>WEKKELI (Alexander)</s1></fA11><fA11 i1="11" i2="1"><s1>BETT (Andreas W.)</s1></fA11><fA11 i1="12" i2="1"><s1>KRAUSE (Rainer)</s1></fA11><fA11 i1="13" i2="1"><s1>PICCIN (Matteo)</s1></fA11><fA11 i1="14" i2="1"><s1>BLANC (Nicolas)</s1></fA11><fA11 i1="15" i2="1"><s1>DRAZEK (Charlotte)</s1></fA11><fA11 i1="16" i2="1"><s1>GUIOT (Eric)</s1></fA11><fA11 i1="17" i2="1"><s1>GHYSELEN (Bruno)</s1></fA11><fA11 i1="18" i2="1"><s1>SALVETAT (Thierry)</s1></fA11><fA11 i1="19" i2="1"><s1>TAUZIN (Aurélie)</s1></fA11><fA11 i1="20" i2="1"><s1>SIGNAMARCHEIX (Thomas)</s1></fA11><fA11 i1="21" i2="1"><s1>DOBRICH (Anja)</s1></fA11><fA11 i1="22" i2="1"><s1>HANNAPPEL (Thomas)</s1></fA11><fA11 i1="23" i2="1"><s1>SCHWARZBURG (Klaus)</s1></fA11><fA14 i1="01"><s1>Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2</s1><s2>79110 Freiburg</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></fA14><fA14 i1="02"><s1>SOITEC S.A., Parc Technologique des Fontaines</s1><s2>38190 Bernin</s2><s3>FRA</s3><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ><sZ>15 aut.</sZ><sZ>16 aut.</sZ><sZ>17 aut.</sZ></fA14><fA14 i1="03"><s1>CEA LETI MINATEC campus, 17 rue des Martyrs</s1><s2>38054 Grenoble</s2><s3>FRA</s3><sZ>18 aut.</sZ><sZ>19 aut.</sZ><sZ>20 aut.</sZ></fA14><fA14 i1="04"><s1>Helmholtz-Zentrum Berlin HZB, Hahn-Meitner-Platz 1</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>21 aut.</sZ><sZ>22 aut.</sZ><sZ>23 aut.</sZ></fA14><fA20><s1>277-282</s1></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>26755</s2><s5>354000505732610010</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>19 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0055767</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Progress in photovoltaics : (Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Triple-junction solar cells from III-V compound semiconductors have thus far delivered the highest solar-electric conversion efficiencies. Increasing the number of junctions generally offers the potential to reach even higher efficiencies, but material quality and the choice of bandgap energies turn out to be even more importance than the number of junctions. Several four-junction solar cell architectures with optimum bandgap combination are found for lattice-mismatched III-V semiconductors as high bandgap materials predominantly possess smaller lattice constant than low bandgap materials. Direct wafer bonding offers a new opportunity to combine such mismatched materials through a permanent, electrically conductive and optically transparent interface. In this work, a GaAs-based top tandem solar cell structure was bonded to an InP-based bottom tandem cell with a difference in lattice constant of 3.7%. The result is a GaInP/GaAs//GaInAsP/GaInAs four-junction solar cell with a new record efficiency of 44.7% at 297-times concentration of the AM1.5d (ASTM G173-03) spectrum. This work demonstrates a successful pathway for reaching highest conversion efficiencies with III-V multi-junction solar cells having four and in the future even more junctions.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Pastille électronique</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Wafer</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Pastilla electrónica</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Cellule solaire concentrateur</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Concentrator solar cells</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Evaluation performance</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Performance evaluation</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Evaluación prestación</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Cellule solaire multijonction</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Multijunction solar cells</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Composé III-V</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>III-V compound</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Taux conversion</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Conversion rate</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Factor conversión</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Désadaptation</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Mismatching</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Desadaptación</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Méthode directe</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Direct method</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Método directo</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Fixation pastille</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Wafer bonding</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Fijación pastilla</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Cellule solaire tandem</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Tandem solar cell</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Célula solar tándem</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Composé ternaire</s0><s5>22</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Ternary compound</s0><s5>22</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Compuesto ternario</s0><s5>22</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Phosphure de gallium</s0><s5>23</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Gallium phosphide</s0><s5>23</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Galio fosfuro</s0><s5>23</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Phosphure d'indium</s0><s5>24</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Indium phosphide</s0><s5>24</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Indio fosfuro</s0><s5>24</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Composé binaire</s0><s5>25</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Binary compound</s0><s5>25</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Compuesto binario</s0><s5>25</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>GaInP</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>InP</s0><s4>INC</s4><s5>83</s5></fC03><fN21><s1>069</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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